SAMSUNG 850 EVO M.2 2280 250GB SATA III 3-D Vertical Internal SSD Single Unit Version MZ-N5E250BW Max Sequential Read: Up to 540 MBps Max Sequential Write: Up to 500 MBps 4KB Random Read: Up to 97,000 IOPS (4KB, QD32) Up to 10,000 IOPS (4KB, QD1) Controller: MGX 4KB Random Write: Up to 89,000 IOPS (4KB, QD32) Up to 40,000 IOPS (4KB, QD1) Power Consumption (Active): Average: 2.4W Maximum: 3.7W (Burst mode) Power Consumption (Idle): 50 mW Max Shock Resistance: 1500G & 0.5ms (Half sine)
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